- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,350
In-stock
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Fairchild Semiconductor | IGBT Transistors 1200V, 25A Field Stop Trench IGBT | Through Hole | TO-247G03-3 | + 175 C | Tube | 428 W | Single | 1200 V | 1.9 V | 50 A | 400 nA | + /- 25 V | |||
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17,800
In-stock
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Infineon Technologies | IGBT Transistors 600V 75A 100nA | Through Hole | TO-247-3 | + 175 C | Tube | 428 W | Single | 600 V | 1.9 V | 80 A | 100 nA | 5.7 V | |||
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233
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 75A | Through Hole | TO-247-3 | + 175 C | Tube | 428 W | Single | 600 V | 1.9 V | 150 A | 100 nA | 20 V | |||
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240
In-stock
|
Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 75A | Through Hole | TO-247-3 | + 175 C | Tube | 428 W | Single | 600 V | 1.9 V | 150 A | 100 nA | 20 V | |||
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27,100
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 75A | Through Hole | TO-247-3 | + 175 C | Tube | 428 W | Single | 600 V | 1.9 V | 80 A | 100 nA | 5.7 V |
