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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGY80H65DFB
1+
$13.620
10+
$12.520
25+
$12.000
50+
$11.350
RFQ
32
In-stock
STMicroelectronics IGBT Transistors Trench gte FieldStop IGBT 650V 80A Through Hole Max247-3 + 175 C Tube 469 W Single 650 V 1.9 V 120 A 250 nA +/- 20 V
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