- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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450
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V, 75A Field Stop IGBT | Through Hole | Power-247 | Tube | 750 W | 600 V | 1.9 V | 150 A | 400 nA | 20 V | |||||
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303
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V, 60A Field Stop IGBT | Through Hole | TO-3PN | Tube | 600 W | 650 V | 1.9 V | 120 A | 400 nA | 20 V | |||||
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4,350
In-stock
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Fairchild Semiconductor | IGBT Transistors 1200V, 25A Field Stop Trench IGBT | Through Hole | TO-247G03-3 | + 175 C | Tube | 428 W | Single | 1200 V | 1.9 V | 50 A | 400 nA | + /- 25 V | |||
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493
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/40A Field Stop IGBT ver. 2 | Through Hole | TO-247 | + 150 C | Tube | 349 W | 600 V | 1.9 V | 80 A | 400 nA | 20 V | ||||
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360
In-stock
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Fairchild Semiconductor | IGBT Transistors 600 V 40 A 62.5 W | Through Hole | TO-3PF | + 175 C | Tube | 62.5 W | 600 V | 1.9 V | 40 A | 400 nA | 20 V | ||||
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44,000
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V/60A Field Stop IGBT ver. 2 | Through Hole | TO-247 | + 150 C | Tube | 600 W | 600 V | 1.9 V | 120 A | 400 nA | 20 V | ||||
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420
In-stock
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Fairchild Semiconductor | IGBT Transistors 1200V, 15A, Field Stop Trench IGBT | Through Hole | TO-247G03-3 | + 175 C | Tube | 333 W | Single | 1200 V | 1.9 V | 30 A | 400 nA | + /- 25 V |
