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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGW60H65DRF
1+
$8.950
10+
$8.090
25+
$7.710
100+
$6.700
RFQ
861
In-stock
STMicroelectronics IGBT Transistors 60A 650V Field Stop Trench Gate IBGT SMD/SMT TO-247   Tube 360 W   650 V 1.9 V 120 A 250 nA 20 V
FGA60N65SMD
1+
$5.950
10+
$5.380
25+
$5.130
100+
$4.450
RFQ
303
In-stock
Fairchild Semiconductor IGBT Transistors 650V, 60A Field Stop IGBT Through Hole TO-3PN   Tube 600 W   650 V 1.9 V 120 A 400 nA 20 V
FGH60N60SMD
1+
$3.000
10+
$2.300
100+
$1.950
500+
$1.800
1000+
$1.700
RFQ
44,000
In-stock
Fairchild Semiconductor IGBT Transistors 600V/60A Field Stop IGBT ver. 2 Through Hole TO-247 + 150 C Tube 600 W   600 V 1.9 V 120 A 400 nA 20 V
STGY80H65DFB
1+
$13.620
10+
$12.520
25+
$12.000
50+
$11.350
RFQ
32
In-stock
STMicroelectronics IGBT Transistors Trench gte FieldStop IGBT 650V 80A Through Hole Max247-3 + 175 C Tube 469 W Single 650 V 1.9 V 120 A 250 nA +/- 20 V
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