- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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861
In-stock
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STMicroelectronics | IGBT Transistors 60A 650V Field Stop Trench Gate IBGT | SMD/SMT | TO-247 | Tube | 360 W | 650 V | 1.9 V | 120 A | 250 nA | 20 V | ||||||
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303
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V, 60A Field Stop IGBT | Through Hole | TO-3PN | Tube | 600 W | 650 V | 1.9 V | 120 A | 400 nA | 20 V | ||||||
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44,000
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/60A Field Stop IGBT ver. 2 | Through Hole | TO-247 | + 150 C | Tube | 600 W | 600 V | 1.9 V | 120 A | 400 nA | 20 V | |||||
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32
In-stock
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STMicroelectronics | IGBT Transistors Trench gte FieldStop IGBT 650V 80A | Through Hole | Max247-3 | + 175 C | Tube | 469 W | Single | 650 V | 1.9 V | 120 A | 250 nA | +/- 20 V |