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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGP4640DPBF
1+
$5.070
10+
$4.310
25+
$4.230
100+
$3.730
RFQ
264
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC Through Hole TO-247-3 + 175 C Tube 125 W   600 V 1.9 V 40 A 100 nA 20 V
IRGP4640D-EPBF
1+
$5.560
10+
$4.730
25+
$4.640
100+
$4.100
RFQ
315
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC Through Hole TO-247AD-3 + 175 C Tube 125 W   600 V 1.9 V 40 A 100 nA 20 V
FGAF20N60SMD
1+
$3.420
10+
$2.910
100+
$2.520
250+
$2.390
RFQ
360
In-stock
Fairchild Semiconductor IGBT Transistors 600 V 40 A 62.5 W Through Hole TO-3PF + 175 C Tube 62.5 W   600 V 1.9 V 40 A 400 nA 20 V
Default Photo
1+
$4.090
10+
$3.480
100+
$3.010
250+
$2.860
RFQ
230
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop Through Hole TO-247-3 + 175 C Tube 310 W Single 1350 V 1.9 V 40 A 100 nA 5.8 V
IHW20N135R3FKSA1
1+
$4.090
10+
$3.480
100+
$3.010
250+
$2.860
RFQ
193
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 310 W Single 1350 V 1.9 V 40 A 100 nA 5.8 V
IKW20N60TAFKSA1
1+
$4.140
10+
$3.520
100+
$3.050
250+
$2.900
RFQ
5,240
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 166 W Single 600 V 1.9 V 40 A 100 nA 20 V
Default Photo
240+
$3.050
480+
$2.900
720+
$2.600
1200+
$2.190
VIEW
RFQ
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop Through Hole TO-247-3 + 175 C Tube 166 W Single 600 V 1.9 V 40 A 100 nA 20 V
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