IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Maximum Gate Emitter Voltage
	GB4062D	1+ $4.000 10+ $3.000 100+ $3.000 250+ $2.000		PDF RFQ	12,100 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-220AB-3		Tube	250 W	Single	600 V	1.95 V	48 A	+/- 20 V
	IRGB4061DPBF	1+ $3.080 10+ $2.620 100+ $2.270 250+ $2.150		PDF RFQ	410 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-220AB-3	+ 175 C	Tube	206 W	Single	600 V	1.95 V	36 A	+/- 20 V

GB4062D

GB4062D

Infineon Technologies

IGBT Transistors 600V UltraFast Trench IGBT

Stock : 12,100

1+: $4.000

10+: $3.000

100+: $3.000

250+: $2.000

IRGB4061DPBF

IRGB4061DPBF

Infineon Technologies

IGBT Transistors 600V UltraFast Trench IGBT

Stock : 410

1+: $3.080

10+: $2.620

100+: $2.270

250+: $2.150

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