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Package / Case :
Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4PH50UDPBF
1+
$7.420
10+
$6.700
25+
$6.390
100+
$5.550
RFQ
2,534
In-stock
Infineon Technologies IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT Through Hole TO-247-3 + 150 C Tube 200 W Single 1.2 kV 3.7 V 45 A   +/- 20 V
IXYH30N120C3D1
1+
$10.540
10+
$9.530
25+
$9.090
100+
$7.890
RFQ
39
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT Through Hole TO-247-3 + 150 C Tube 416 W Single 1200 V 3.7 V 66 A 100 nA 30 V
IXYH30N120C3
1+
$8.020
10+
$7.250
25+
$6.910
100+
$6.000
RFQ
30
In-stock
IXYS IGBT Transistors 1200V XPT GenX3 IGBT Through Hole TO-247-3 + 150 C Tube 500 W Single 1200 V 3.7 V 75 A 100 nA 30 V
IXYP30N120C3
1+
$6.590
10+
$5.960
50+
$5.680
100+
$4.940
RFQ
70
In-stock
IXYS IGBT Transistors GenX3 1200V XPT IGBT Through Hole TO-220-3 + 175 C Tube 500 W Single 1200 V 3.7 V 75 A 100 nA 30 V
IRG4PH50UPBF
1+
$6.220
10+
$5.290
25+
$5.190
100+
$4.580
VIEW
RFQ
Infineon Technologies IGBT Transistors 1200V ULTRAFAST 5-40KHZ DSCRETE IGB... Through Hole TO-247-3 + 150 C Tube 200 W Single 1.2 kV 3.7 V 45 A   +/- 20 V
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