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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Maximum Gate Emitter Voltage
IRGSL4B60KD1PBF
1+
$1.920
10+
$1.630
100+
$1.310
500+
$1.140
RFQ
172
In-stock
IR / Infineon IGBT Transistors 600V Low-Vceon Non Punch Through Through Hole TO-262-3 Tube 63 W Single 600 V 2.5 V 12 A +/- 20 V
IRGSL10B60KDPBF
1+
$2.890
10+
$2.450
100+
$2.130
250+
$2.020
RFQ
156
In-stock
IR / Infineon IGBT Transistors 600V UltraFast 10-30kHz Through Hole TO-262-3 Tube 104 W Single 600 V 2.2 V 22 A +/- 20 V
IRGSL14C40LPBF
1+
$2.870
10+
$2.440
100+
$1.950
250+
$1.850
RFQ
267
In-stock
IR / Infineon IGBT Transistors 430V Low-Vceon Through Hole TO-262-3 Tube 125 W Single 430 V 1.4 V 20 A 10 V
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