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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGP4066DPBF
Per Unit
$6.000
RFQ
4,060
In-stock
IR / Infineon IGBT Transistors 600V UltraFast Trench IGBT Through Hole TO-247-3   Tube 454 W Single 600 V 2.1 V 140 A   +/- 20 V
IRGP6690D-EPBF
1+
$8.760
10+
$7.920
25+
$7.550
50+
$7.030
RFQ
647
In-stock
IR / Infineon IGBT Transistors 600V UltraFast IGBT TO-247 Through Hole TO-247AD-3 + 175 C Tube 483 W Single 600 V 1.65 V 140 A 200 nA 20 V
AUIRGP4066D1
1+
$11.750
10+
$10.810
25+
$10.360
50+
$9.800
RFQ
35
In-stock
IR / Infineon IGBT Transistors 600V co-pack Auto Trench IGBT Through Hole TO-247-3   Tube 454 W   600 V 2.1 V 140 A 100 nA 20 V
AUIRGP4066D1-E
1+
$11.750
10+
$10.810
25+
$10.360
50+
$9.800
RFQ
70
In-stock
IR / Infineon IGBT Transistors 600V co-pack Auto Trench IGBT Through Hole TO-247-3   Tube 454 W   600 V 2.1 V 140 A 100 nA 20 V
IRGP4066-EPBF
1+
$7.860
10+
$7.100
25+
$6.770
100+
$5.880
RFQ
104
In-stock
IR / Infineon IGBT Transistors 600V Low VCEon Trench IGBT Through Hole TO-247AD-3   Tube 454 W Single 600 V 2.1 V 140 A   +/- 20 V
IRGP4266D-EPBF
1+
$10.750
10+
$9.720
25+
$9.260
50+
$8.630
RFQ
51
In-stock
IR / Infineon IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT Through Hole TO-247AD-3 + 175 C Tube 455 W Single 650 V 1.7 V 140 A 100 nA 20 V
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