- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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178
In-stock
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Infineon Technologies | IGBT Transistors 600V Low VCEon Trench IGBT | Through Hole | TO-247-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V | |||||
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70
In-stock
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Infineon Technologies | IGBT Transistors 1200V 140A | Through Hole | TO-247-3 | + 175 C | Tube | 556 W | Single | 1.2 kV | 1.7 V | 140 A | 200 nA | +/- 30 V | |||
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66
In-stock
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Infineon Technologies | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | Through Hole | TO-247AC-3 | + 175 C | Tube | 455 W | Single | 650 V | 1.7 V | 140 A | 100 nA | 20 V | |||
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21
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AC-3 | + 175 C | Tube | 483 W | Single | 600 V | 1.65 V | 140 A | 200 nA | 20 V | |||
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1,740
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast Trench IGBT | Through Hole | TO-247AD-3 | Tube | 454 W | Single | 600 V | 2.1 V | 140 A | +/- 20 V | |||||
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240
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop | Through Hole | TO-247-3 | + 175 C | Tube | 714 W | Single | 600 V | 2.25 V | 140 A | 100 nA | 20 V |
