- Package / Case :
- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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370
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 150A | IGBT Silicon Modules | Module | + 150 C | Bulk | 790 W | Dual | 1200 V | 1.75 V | 150 A | 100 nA | ||||
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120
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 600A | IGBT Silicon Modules | + 150 C | 4050 W | Dual | 1200 V | 2.1 V | 995 A | 400 nA | ||||||
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GET PRICE |
278
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 300A | IGBT Silicon Modules | 62 mm | + 150 C | Tray | 1600 W | Dual | 1200 V | 2.1 V | 450 A | 400 nA | |||
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109
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 580A | IGBT Silicon Modules | 62 mm | + 150 C | Bulk | 2400 W | Dual | 1200 V | 2.1 V | 580 A | 400 nA | ||||
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GET PRICE |
15,000
In-stock
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Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | PRIME2 | + 150 C | Dual | 1200 V | 600 A | |||||||
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16,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 600A | IGBT Silicon Modules | PRIME2 | + 150 C | 3.35 kW | Dual | 1200 V | 2.1 V | 600 A | 400 nA | |||||
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GET PRICE |
20,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 1.4KA | IGBT Silicon Modules | PRIME3 | + 150 C | 7.65 kW | Dual | 1200 V | 2.05 V | 1400 A | 400 nA | ||||
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GET PRICE |
15,100
In-stock
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Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | PRIME2 | + 150 C | 5.1 kW | Dual | 1200 V | 2.1 V | 900 A | 400 nA | ||||
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165
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 460A | IGBT Silicon Modules | 62 mm | + 150 C | 1600 W | Dual | 1200 V | 2.15 V | 460 A | 400 nA | |||||
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3
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 450A | IGBT Silicon Modules | PRIME2 | + 150 C | Dual | 1200 V | 450 A | ||||||||
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GET PRICE |
420
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 320A | IGBT Silicon Modules | 62 mm | + 150 C | Dual | 1200 V | 320 A | |||||||
|
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150
In-stock
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Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | 62 mm | + 150 C | 1100 W | Dual | 1200 V | 2.05 V | 240 A | 400 nA | ||||
|
GET PRICE |
40,000
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 75A | IGBT Silicon Modules | + 150 C | 395 W | Dual | 1200 V | 2.15 V | 75 A | 100 nA | |||||
|
GET PRICE |
101
In-stock
|
Infineon Technologies | IGBT Modules IGBT 1200V 450A | IGBT Silicon Modules | + 150 C | 2250 W | Dual | 1200 V | 2.1 V | 675 A | 400 nA | |||||
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VIEW | Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | Econo D | + 150 C | 1050 W | Dual | 1200 V | 2.15 V | 295 A | 400 nA |