- Maximum Operating Temperature :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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370
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 150A | IGBT Silicon Modules | Module | + 150 C | Bulk | 790 W | Dual | 1200 V | 1.75 V | 150 A | 100 nA | |||
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4
In-stock
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Infineon Technologies | IGBT Modules | IGBT Silicon Modules | Module | + 125 C | - | Dual | 1200 V | 1.7 V | 400 A | 400 nA |
