- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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570
In-stock
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Infineon Technologies | IGBT Modules IGBT 600V 50A | IGBT Silicon Modules | Module | + 150 C | Tray | 175 W | IGBT-Inverter | 600 V | 1.45 V | 65 A | 400 nA | |||
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27
In-stock
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Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | Module | + 150 C | 71.5 W | IGBT-Inverter | 600 V | 1.55 V | 25 A | 400 nA | |||||
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11
In-stock
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Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | Module | + 150 C | 65 W | IGBT-Inverter | 600 V | 1.55 V | 22 A | 400 nA | |||||
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10
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 75A 650V | IGBT Silicon Modules | Module | + 150 C | 250 W | IGBT-Inverter | 650 V | 1.55 V | 75 A | 400 nA | |||||
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18
In-stock
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Infineon Technologies | IGBT Modules IGBT MODULES 600V 50A | IGBT Silicon Modules | Module | + 150 C | Bulk | 175 W | IGBT-Inverter | 600 V | 1.45 V | 75 A | 400 nA | ||||
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150
In-stock
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Infineon Technologies | IGBT Modules IGBT MODULES 650V 150A | IGBT Silicon Modules | Module | + 150 C | 335 W | IGBT-Inverter | 650 V | 1.45 V | 150 A | 400 nA | ||||
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18,400
In-stock
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Infineon Technologies | IGBT Modules IGBT Module 400A 650V | IGBT Silicon Modules | Module | + 150 C | 1250 W | IGBT-Inverter | 650 V | 1.55 V | 485 A | 400 nA | ||||
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VIEW | Infineon Technologies | IGBT Modules IGBT 600V 15A | IGBT Silicon Modules | Module | + 150 C | 71.5 W | IGBT-Inverter | 600 V | 1.55 V | 22 A | 400 nA |