- Gate-Emitter Leakage Current :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
20,100
In-stock
|
Infineon Technologies | IGBT Modules 1200V 50A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | Bulk | 400 W | Half Bridge | 1200 V | 2.5 V | 78 A | 200 nA | ||||
|
13,600
In-stock
|
Infineon Technologies | IGBT Modules 1200V 75A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | 625 W | Half Bridge | 1200 V | 2.5 V | 105 A | 320 nA | |||||
|
19,500
In-stock
|
Infineon Technologies | IGBT Modules 1200V 100A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | 700 W | Half Bridge | 1200 V | 2.5 V | 145 A | 400 nA |