- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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151
In-stock
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Infineon Technologies | IGBT Modules 1200V 150A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.25 kW | Dual | 1200 V | 3.2 V | 225 A | 400 nA | ||
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8,500
In-stock
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Infineon Technologies | IGBT Modules 600V 300A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.25 kW | Dual | 600 V | 1.95 V | 375 A | 400 nA | |||
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17,100
In-stock
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Infineon Technologies | IGBT Modules 1200V 150A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.25 kW | Dual | 1200 V | 2.1 V | 300 A | 400 nA | |||
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365
In-stock
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Infineon Technologies | IGBT Modules 1700V 150A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 1.25 kW | Dual | 1700 V | 2.6 V | 300 A | 200 nA |
