- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
13,500
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.7KV 404A | IGBT Silicon Modules | 62 mm | + 125 C | 1450 W | Dual | 1700 V | 2.45 V | 404 A | 400 nA | ||
|
|
GET PRICE |
26
In-stock
|
Infineon Technologies | IGBT Modules IGBT Module 450A 650V | IGBT Silicon Modules | + 150 C | 1450 W | Dual | 650 V | 1.95 V | 560 A | 100 nA |
