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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules 1200V 200A DUAL | IGBT Silicon Modules | Half Bridge2 | + 150 C | 1.4 kW | Half Bridge | 1200 V | 2.5 V | 290 A | 400 nA |
