- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
109
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 580A | IGBT Silicon Modules | 62 mm | + 150 C | Bulk | 2400 W | Dual | 1200 V | 2.1 V | 580 A | 400 nA | |||
|
|
350
In-stock
|
Infineon Technologies | IGBT Modules N-CH 1.2KV 580A | IGBT Silicon Modules | 62 mm | + 125 C | 2000 W | Dual | 1200 V | 2.15 V | 580 A | 400 nA |
