- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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278
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 300A | IGBT Silicon Modules | 62 mm | + 150 C | Tray | 1600 W | Dual | 1200 V | 2.1 V | 450 A | 400 nA | |||
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3
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 450A | IGBT Silicon Modules | PRIME2 | + 150 C | Dual | 1200 V | 450 A | ||||||||
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380
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 300A | IGBT Silicon Modules | + 125 C | 1.6 kW | Dual | 1200 V | 1.75 V | 450 A | 0.4 uA |