- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
12,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 225A | IGBT Silicon Modules | 62 mm | + 125 C | Tray | 780 W | Dual | 1200 V | 2.15 V | 225 A | 400 nA | ||
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154
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 225A | IGBT Silicon Modules | + 150 C | Tray | 1050 W | 1200 V | 2.15 V | 225 A | 400 nA | |||||
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110
In-stock
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Infineon Technologies | IGBT Modules 1200V 100A 3-PHASE | IGBT Silicon Modules | EconoPACK 3B | + 125 C | Tray | 480 W | Hex | 1200 V | 2.15 V | 140 A | 400 nA | |||
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154
In-stock
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STMicroelectronics | IGBT Modules IGBT & Power Bipolar | IGBT Silicon Modules | NDIP-26L | + 150 C | Tray | 8 W | 3-Phase Inverter | 600 V | 2.15 V | 3 A | - |
