- Maximum Operating Temperature :
- Gate-Emitter Leakage Current :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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245
In-stock
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Infineon Technologies | IGBT Modules 1200V 50A PIM | IGBT Silicon Modules | EconoPIM3 | + 125 C | Bulk | 270 W | Hex | 1200 V | 2.15 V | 75 A | 400 nA | |||
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3
In-stock
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Infineon Technologies | IGBT Modules 3 PHASE POWER BRIDGE | IGBT Silicon Modules | + 150 C | Bulk | 500 W | 1200 V | 2.15 V | 135 A | 100 nA | ||||||
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10
In-stock
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Infineon Technologies | IGBT Modules IGBT MODULES 1200V 150A | IGBT Silicon Modules | + 150 C | Bulk | 790 W | 1200 V | 2.15 V | 150 A | 100 nA |