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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules | IGBT Silicon Modules | EasyPack2B | + 150 C | 250 W | Bridge | 650 V | 1.35 V | 75 A | 100 nA | ||||
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VIEW | IXYS | IGBT Modules 40khz C-IGBT w/Diode Power Device | TO-268 | + 150 C | Tube | 250 W | 1.4 kV | 1.4 kV | 42 A | 100 nA |
