- Package / Case :
- Pd - Power Dissipation :
- Configuration :
- Continuous Collector Current at 25 C :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
10,300
In-stock
|
Infineon Technologies | IGBT Modules 3300V 200A DUAL | IHM 73X140-8 | + 125 C | 2.2 kW | Dual | 3300 V | 3.4 V | 330 A | 400 nA | ||||
|
128
In-stock
|
Infineon Technologies | IGBT Modules 3300V 1200A SINGLE | IS5a ( 62 mm )-9 | + 125 C | 14.5 kW | Triple Common Emitter Common Gate | 3300 V | 3.4 V | 2000 A | 400 nA | |||||
|
36
In-stock
|
Infineon Technologies | IGBT Modules 3300V 800A CHOPPER | IGBT Silicon Modules | IHM190 | + 125 C | 9.6 kW | Dual | 3300 V | 3.4 V | 1300 A | 400 nA | ||||
|
162
In-stock
|
Infineon Technologies | IGBT Modules 3300V 800A SINGLE | IGBT Silicon Modules | IHM | + 125 C | 9.6 kW | Single | 3300 V | 3.4 V | 1300 A | 400 nA | ||||
|
15,600
In-stock
|
Infineon Technologies | IGBT Modules 3300V 400A DUAL | IGBT Silicon Modules | IHM | + 125 C | 4.8 kW | Dual | 3300 V | 3.4 V | 660 A | 400 nA |