- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Package | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
78
In-stock
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Infineon Technologies | IGBT Modules 1700V 400A DUAL | - 40 C | + 125 C | Box | 3.3 kW | 1700 V | 2.6 V | 650 A | 400 nA | 20 V | Module | 100% Green available | |||||
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GET PRICE |
62
In-stock
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Infineon Technologies | IGBT Modules 1200V 400A DUAL | - 40 C | + 125 C | Box | 2.8 kW | 1200 V | 2.1 V | 650 A | 600 nA | 20 V | Module | 100% Green available | |||||
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8
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.2KV 650A | IGBT Silicon Modules | 62 mm | + 125 C | Bulk | Single Dual Collector Dual Emitter | 1200 V | 650 A | ||||||||||
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138
In-stock
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Infineon Technologies | IGBT Modules 1200V 400A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 2250 W | Single | 1200 V | 1.7 V | 650 A | 400 nA | ||||||||
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4
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 650A | IGBT Silicon Modules | IHM | + 125 C | 3.1 kW | Dual | 1700 V | 2.6 V | 650 A | 400 nA | ||||||||
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GET PRICE |
14,000
In-stock
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Infineon Technologies | IGBT Modules N-CH 1.7KV 650A | IGBT Silicon Modules | IHM73 | + 125 C | 3.1 kW | Single | 1700 V | 2.6 V | 650 A | 400 nA |
