- Configuration :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
12,500
In-stock
|
Infineon Technologies | IGBT Modules N-CH 600V 100A | IGBT Silicon Modules | Econo 3 | + 150 C | 335 W | Array 7 | 600 V | 1.9 V | 100 A | 100 nA | |||
|
7
In-stock
|
Infineon Technologies | IGBT Modules IGBT Module 100A 650V | IGBT Silicon Modules | + 150 C | 335 W | 650 V | 1.95 V | 100 A | 400 nA | ||||||
|
120
In-stock
|
Infineon Technologies | IGBT Modules ECONO PACK 3 WITH FAST TRENCH | IGBT Silicon Modules | Econo 3 | + 150 C | 335 W | Hex | 600 V | 1.9 V | 100 A | 400 nA |