- Pd - Power Dissipation :
- Gate-Emitter Leakage Current :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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1
In-stock
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Infineon Technologies | IGBT Modules IGBT POWER MOD 1200v 300A | IGBT Silicon Modules | 62 mm | + 150 C | 2.5 kW | Single | 1200 V | 2.5 V | 430 A | 0.32 uA | ||||
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110
In-stock
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Infineon Technologies | IGBT Modules 1200V 300A SINGLE | IGBT Silicon Modules | 62 mm | + 150 C | Tray | 2500 W | Single | 1200 V | 2.5 V | 430 A | 320 nA |
