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Maximum Operating Temperature :
Pd - Power Dissipation :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage Package RoHS
FD600R16KF4
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RFQ
20
In-stock
Infineon Technologies IGBT Modules 1600V 600A CHOPPER     - 40 C + 125 C Box 3.9 kW   1600 V 3.5 V 600 A   20 V Module 100% Green available
FS300R16KF4
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RFQ
Infineon Technologies IGBT Modules 1600V 300A F/DIODE     - 40 C + 150 C Box 2 kW   1600 V 3.5 V 300 A 400 nA 20 V Module 100% Green available
FF600R16KF4
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RFQ
68
In-stock
Infineon Technologies IGBT Modules 1600V 600A DUAL     - 40 C + 125 C Box 3.9 kW   1600 V 3.5 V 600 A   20 V Module 100% Green available
FZ1800R16KF4
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RFQ
13,800
In-stock
Infineon Technologies IGBT Modules 1600V 1800A SINGLE     - 40 C + 125 C Box 11 kW Triple Common Emitter Common Gate 1600 V 3.5 V 1800 A 600 nA 20 V Module 100% Green available
FZ1200R16KF4
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RFQ
12,600
In-stock
Infineon Technologies IGBT Modules 1600V 1200A SINGLE IGBT Silicon Modules IHM130   + 125 C   7.8 kW Dual 1600 V 3.5 V 1200 A 400 nA      
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