2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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15,300
In-stock
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Infineon Technologies | IGBT Modules 1200V 100A DUAL | IGBT Silicon Modules | 34MM | + 125 C | Tray | 835 W | Dual | 1200 V | 2.1 V | 205 A | 400 nA | |||
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VIEW | Infineon Technologies | IGBT Modules 1200V 100A CHOPPER | IGBT Silicon Modules | 34MM | + 125 C | 830 W | Single | 1200 V | 2.1 V | 205 A | 400 nA |
