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Package / Case :
Packaging :
Minimum Quantity :
Reverse Recovery Time (trr) :
Voltage - Collector Emitter Breakdown (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Input Type Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity Power - Max Reverse Recovery Time (trr) IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
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$5.044
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Infineon Technologies IGBT CHIP WAFER Die - Bulk Standard Surface Mount 175°C (TJ) Active Die 0 998 - - Trench 600V 48A - - - - - -
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$2.224
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Infineon Technologies IGBT CHIP WAFER Die - Bulk Standard Surface Mount -55°C ~ 175°C (TJ) Active Die 0 806 - 45ns Trench Field Stop 600V 48A - - - - - -
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$2.224
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Infineon Technologies IGBT CHIP WAFER Die - Bulk Standard Surface Mount -55°C ~ 175°C (TJ) Active Die 0 822 - 60ns Trench Field Stop 650V 48A - - - - - -
IRGB4062DPBF
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12,100
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Infineon Technologies IGBT 600V 48A 250W TO220AB TO-220-3 - Tube Standard Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 250W 89ns Trench 600V 48A 1.95V @ 15V, 24A 72A 115µJ (on), 600µJ (off) 50nC 41ns/104ns 400V, 24A, 10 Ohm, 15V
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