IGBT Modules - Kaimeite

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5 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Package / Case	Series	Packaging	Configuration	Mounting Type	Operating Temperature	Part Status	Supplier Device Package	Input	Factory Stock	Minimum Quantity	Power - Max	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	NTC Thermistor	Switching Energy	Gate Charge	Td (on/off) @ 25°C	Test Condition
	IRG8B08N120KDPBF		GET PRICE VIEW	PDF RFQ		Infineon Technologies	DIODE 1200V 8A TO-220	TO-220-3	-	Tube		Through Hole	-40°C ~ 150°C (TJ)	Obsolete	TO-220AB		0	200	89W	50ns	1200V	15A	2V @ 15V, 5A				300µJ (on), 300µJ (off)	45nC	20ns/160ns	600V, 5A, 47 Ohm, 15V
	IRG8P08N120KD-EPBF		GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT 1200V 15A 89W TO-247AD	TO-247-3	-	Tube		Through Hole	-40°C ~ 150°C (TJ)	Obsolete	TO-247AD		0	125	89W	50ns	1200V	15A	2V @ 15V, 5A				300µJ (on), 300µJ (off)	45nC	20ns/160ns	600V, 5A, 47 Ohm, 15V
	IRG8P08N120KDPBF		GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT 1200V 15A 89W TO-247AC	TO-247-3	-	Tube		Through Hole	-40°C ~ 150°C (TJ)	Obsolete	TO-247AC		0	125	89W	50ns	1200V	15A	2V @ 15V, 5A				300µJ (on), 300µJ (off)	45nC	20ns/160ns	600V, 5A, 47 Ohm, 15V
	IRG7CH37K10EF	Per Unit $2.173	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT CHIP WAFER	Die	-	Bulk		Surface Mount	-40°C ~ 175°C (TJ)	Active	Die		0	2290	-	-	1200V	15A	2.3V @ 15V, 15A				-	80nC	28ns/122ns	600V, 15A, 10 Ohm, 15V
	BSM10GD120DN2E3224BOSA1	Per Unit $56.910	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT 2 LOW POWER ECONO2-1	Module	-		Full Bridge	Chassis Mount	150°C (TJ)	Not For New Designs	Module	Standard	0	10	80W		1200V	15A	3.2V @ 15V, 10A	400µA	530pF @ 25V	No

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