- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Gate-Emitter Leakage Current :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Factory Pack Quantity | RoHS | |
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182
In-stock
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Mitsubishi Electric | IGBT Modules IGBT MODULE A-SERIES DUAL | Box | 2710 W | 1200 V | 2.1 V | 400 A | 0.5 uA | 20 V | 10 | Green available | |||||||
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85
In-stock
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Infineon Technologies | IGBT Modules | - 40 C | + 125 C | Box | 2500 W | 1200 V | 3.2 V | 400 A | 400 nA | 20 V | 100% Green available | ||||||
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GET PRICE |
185
In-stock
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Infineon Technologies | IGBT Modules 1200V 400A DUAL | - 40 C | + 150 C | Box | 2.7 kW | 1200 V | 2.7 V | 400 A | 400 nA | 20 V | 100% Green available | ||||||
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5
In-stock
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Infineon Technologies | IGBT Modules HYBRID PACK 2 | IGBT Silicon Modules | HybridPack2 | + 150 C | 1500 W | 3-Phase | 1200 V | 1.8 V | 400 A | 400 nA | ||||||||
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200
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 400A | IGBT Silicon Modules | + 150 C | Tray | 2400 W | 1200 V | 2.05 V | 400 A | 400 nA | |||||||||
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4
In-stock
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Infineon Technologies | IGBT Modules | IGBT Silicon Modules | Module | + 125 C | - | Dual | 1200 V | 1.7 V | 400 A | 400 nA |
