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- Pd - Power Dissipation :
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- Gate-Emitter Leakage Current :
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16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | Package | Factory Pack Quantity | RoHS | |
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352
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 75A | Tray | 385 W | 3-Phase Inverter | 1.2 kV | 1.85 V | 75 A | 100 nA | 20 V | Module | 10 | Green available | ||||||
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GET PRICE |
241
In-stock
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Mitsubishi Electric | IGBT Modules IGBT MODULE NF-SERIES DUAL | Box | 650 W | 1.2 kV | 1.8 V | 100 A | 500 nA | 20 V | Module | 10 | Green available | ||||||
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124
In-stock
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Mitsubishi Electric | IGBT Modules IGBT MODULE A-SERIES SINGLE | Box | 2.35 kW | Single | 1.2 kV | 2.1 V | 400 A | 1 uA | 20 V | Module | 10 | Green available | ||||||
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180
In-stock
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Mitsubishi Electric | IGBT Modules | Box | 3.125 kW | 1.2 kV | 1.65 V | 600 A | 500 nA | 20 V | IGBT Modules | 10 | Green available | |||||||
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GET PRICE |
12,600
In-stock
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Infineon Technologies | IGBT Modules IGBT 1200V 400A | IGBT Silicon Modules | Module | + 150 C | 2400 W | Single | 1.2 kV | 1.75 V | 400 A | 400 nA | |||||||
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2
In-stock
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Infineon Technologies | IGBT Modules | IGBT Silicon Modules | EasyPack1B | + 150 C | 275 W | 3-Phase | 1.2 kV | 1.45 V | 45 A | 100 nA | ||||||||
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36
In-stock
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IXYS | IGBT Modules GenX3 1200V IGBTs | TO-268 | + 150 C | Tube | 300 W | Single | 1.2 kV | 1.2 kV | 75 A | 100 nA | ||||||||
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8
In-stock
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IXYS | IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode | IGBT Silicon Modules | SOT-227B-4 | + 150 C | Tube | Single | 1.2 kV | 2.7 V | 145 A | +/- 200 nA | ||||||||
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26
In-stock
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IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | TO-247AD-3 | + 150 C | Tube | Single | 1.2 kV | 3.6 V | 48 A | +/- 100 nA | ||||||||
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19
In-stock
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IXYS | IGBT Modules High Frequency Range >40khz CIGBT w/Diode | SOT-227 B-4 | + 150 C | Tube | 460 W | 1.2 kV | 1.2 kV | 95 A | 100 nA | |||||||||
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21
In-stock
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IXYS | IGBT Modules Low-Frequency Range Low Vcesat w/ Diode | IGBT Silicon Modules | TO-264-3 | + 150 C | Tube | Single | 1.2 kV | 1.85 V | 125 A | +/- 100 nA | ||||||||
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76
In-stock
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IXYS | IGBT Modules GenX3 1200V IGBTs | IGBT Silicon Modules | TO-220AB-3 | + 150 C | Tube | Single | 1.2 kV | 2.4 V | 22 A | +/- 100 nA | ||||||||
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VIEW | IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | TO-247AD-3 | + 150 C | Tube | Single | 1.2 kV | 2.2 V | 70 A | +/- 100 nA | ||||||||
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VIEW | IXYS | IGBT Modules GenX3 1200V IGBTs | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | Single | 1.2 kV | 2.4 V | 22 A | +/- 100 nA | ||||||||
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VIEW | IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | TO-264-3 | + 150 C | Tube | Single | 1.2 kV | 2.6 V | 95 A | +/- 100 nA | ||||||||
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VIEW | IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | IGBT Silicon Modules | PLUS247-3 | + 150 C | Single | 1.2 kV | 2.6 V | 95 A | +/- 100 nA |
