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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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15
In-stock
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IXYS | IGBT Modules High Voltage IGBTs | IGBT Silicon Modules | TO-247AD-3 | + 150 C | Tube | Single | 1.7 kV | 5.4 V | 5.5 A | +/- 100 nA | ||||
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13
In-stock
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Infineon Technologies | IGBT Modules IGBT MODULE HALF BRG 50A 1700V | IGBT Silicon Modules | Module | + 125 C | 345 W | IGBT-Inverter | 1.7 kV | 2 V | 82 A | 400 nA |
