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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
8 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Package / Case Maximum Operating Temperature Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current
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1+
$152.160
5+
$148.500
10+
$144.810
25+
$142.780
RFQ
20
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 100A IGBT Silicon Modules Econo 3 + 150 C   Array 7 1200 V   100 A  
FP100R12KT4
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RFQ
620
In-stock
Infineon Technologies IGBT Modules IGBT-MODULE IGBT Silicon Modules Econo 3 + 150 C 5.15 W 3-Phase 1200 V 2.1 V 100 A 100 nA
FP100R06KE3
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RFQ
12,500
In-stock
Infineon Technologies IGBT Modules N-CH 600V 100A IGBT Silicon Modules Econo 3 + 150 C 335 W Array 7 600 V 1.9 V 100 A 100 nA
FS75R12KT3G
Per Unit
$108.000
RFQ
110
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 100A IGBT Silicon Modules Econo 3 + 125 C 455 W Hex 1200 V 2.15 V 100 A 400 nA
FS100R12KT4G
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RFQ
14,800
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 100A IGBT Silicon Modules Econo 3 + 150 C 515 W Hex 1200 V 2.2 V 100 A 100 nA
FS100R06KE3
1+
$105.540
5+
$103.600
10+
$98.940
25+
$95.640
RFQ
120
In-stock
Infineon Technologies IGBT Modules ECONO PACK 3 WITH FAST TRENCH IGBT Silicon Modules Econo 3 + 150 C 335 W Hex 600 V 1.9 V 100 A 400 nA
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1+
$134.220
5+
$131.580
10+
$125.440
25+
$122.810
RFQ
10
In-stock
Infineon Technologies IGBT Modules N-CH 1.2KV 100A IGBT Silicon Modules Econo 3 + 150 C   Hex 1200 V   100 A  
BSM50GD170DL
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RFQ
17,500
In-stock
Infineon Technologies IGBT Modules N-CH 1.7KV 100A IGBT Silicon Modules Econo 3 + 125 C   Hex 1700 V   100 A  
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