- Maximum Operating Temperature :
- Configuration :
- Gate-Emitter Leakage Current :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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GET PRICE |
12,500
In-stock
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Infineon Technologies | IGBT Modules N-CH 600V 100A | IGBT Silicon Modules | Econo 3 | + 150 C | 335 W | Array 7 | 600 V | 1.9 V | 100 A | 100 nA | ||
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12,000
In-stock
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Infineon Technologies | IGBT Modules IGBT-MODULE | IGBT Silicon Modules | Econo 3 | + 150 C | Array 7 | 600 V | 95 A | ||||||
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GET PRICE |
16,000
In-stock
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Infineon Technologies | IGBT Modules IGBT MODULES 600V | IGBT Silicon Modules | Econo 3 | + 150 C | 430 W | Hex | 600 V | 1.9 V | 150 A | 400 nA | ||
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20,000
In-stock
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Infineon Technologies | IGBT Modules ECONO PACK 3 200A, 600V | IGBT Silicon Modules | Econo 3 | + 150 C | Hex | 600 V | 200 A | ||||||
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120
In-stock
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Infineon Technologies | IGBT Modules ECONO PACK 3 WITH FAST TRENCH | IGBT Silicon Modules | Econo 3 | + 150 C | 335 W | Hex | 600 V | 1.9 V | 100 A | 400 nA | |||
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86
In-stock
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Infineon Technologies | IGBT Modules N-CH 600V 225A | IGBT Silicon Modules | Econo 3 | + 125 C | Quad | 600 V | 225 A |