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Pd - Power Dissipation :
Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Typical Resistor Ratio :
DC Collector/Base Gain hfe Min :
Continuous Collector Current :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Series Packaging Maximum Operating Frequency Pd - Power Dissipation Configuration Transistor Polarity Collector- Emitter Voltage VCEO Max Typical Input Resistor Typical Resistor Ratio DC Collector/Base Gain hfe Min Continuous Collector Current Peak DC Collector Current
RN2904FE,LF
1+
$0.280
10+
$0.185
100+
$0.077
1000+
$0.053
4000+
$0.040
RFQ
7,958
In-stock
Toshiba Bipolar Transistors - Pre-Biased ES6 PLN SMD/SMT ES6-6   RN2904 Reel   100 mW   PNP - 50 V 47 kOhms 1 80 - 100 mA  
RN4906FE(TE85L,F)
1+
$0.390
10+
$0.224
100+
$0.096
1000+
$0.073
4000+
$0.056
RFQ
4,000
In-stock
Toshiba Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100A SMD/SMT ES6-6 + 150 C RN4906 Reel 250 MHz (Typ) 100 mW Dual NPN, PNP 50 V 4.7 kOhms 0.1 80 100 mA 100 mA
RN4902FE(TE85L,F)
1+
$0.390
10+
$0.224
100+
$0.096
1000+
$0.073
4000+
$0.056
RFQ
3,957
In-stock
Toshiba Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100A SMD/SMT ES6-6 + 150 C RN4902 Reel 250 MHz (Typ) 100 mW Dual NPN, PNP 50 V 10 kOhms 1 50 100 mA 100 mA
RN4905FE(TE85L,F)
1+
$0.390
10+
$0.224
100+
$0.096
1000+
$0.073
4000+
$0.056
RFQ
3,260
In-stock
Toshiba Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, -50V, -100A SMD/SMT ES6-6 + 150 C RN4905 Reel 250 MHz (Typ) 100 mW Dual NPN, PNP 50 V 2.2 kOhms 0.0468 80 100 mA 100 mA
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RFQ
Toshiba Bipolar Transistors - Pre-Biased 50mA 20volts 6Pin 10K x 10Kohms SMD/SMT ES6-6 + 150 C RN4982 Reel   50 mW Dual NPN, PNP 20 V 10 kOhms 1 60, 60 50 mA, - 50 mA 50 mA
RN4986FE(T5L,F,T)
1+
$0.390
10+
$0.224
100+
$0.096
1000+
$0.073
4000+
$0.056
RFQ
3,990
In-stock
Toshiba Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ES6, 50V, 100A SMD/SMT ES6-6 + 150 C RN4986 Reel 250 MHz (Typ) 100 mW Dual NPN, PNP 50 V 4.7 kOhms 0.1 80 100 mA 100 mA
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